PART |
Description |
Maker |
UPD44321362GF-A50 UPD44321182 UPD44321182GF-A50 |
32M-BIT ZEROSB SRAM PIPELINED OPERATIO
|
NEC[NEC]
|
UPD44321182GF-A50 UPD44321362GF-A50 |
Film Capacitor; Voltage Rating:630VDC; Capacitor Dielectric Material:Polypropylene; Capacitance:22000pF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:Yes; Series:171; Termination:Radial Leaded 32M-BIT ZEROSB SRAM PIPELINED OPERATIO
|
NEC Corp.
|
AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100 128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100 LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc. ALSC[Alliance Semiconductor Corporation]
|
IDT71V433 IDT71V433S11PF IDT71V433S11PFI IDT71V433 |
From old datasheet system 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs 32K X 32 Flow-Through Ouputs SRAM
|
Integrated Device Technology IDT
|
MC-222263F9-B85X-BT3 MC-222263-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
AS7C33256FT18B AS7C33256FT18BV.1.4 AS7C33256FT18B- |
3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 8 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 10 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 6.5 ns, PQFP100 Sync SRAM - 3.3V From old datasheet system
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
CY7C1481V33-133BZXI CY7C1481V33-133AXI CY7C1481V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
AS7C33512FT32_36A AS7C33512FT32_36A.V1.4 AS7C33512 |
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|